Chemical-mechanical polishing of semiconductor wafers

摘要

A chemical mechanical polishing process in a wafer is polished with slurry under selected operating conditions for a first time period that avoids overpolishing; and then polished with DI water under the selected operating conditions for a second time period until the surface of the wafer is substantially planar and dishing is minimized. The process can be used in conjunction with a damascene or dual-damascene process in which tungsten is polished with respect to BPSG.