METHOD FOR MANUFACTURING MOS TRANSISTOR WITH REDUCED REVERSE SHORT CHANNEL EFFECT

摘要

PURPOSE: A manufacturing method of MOS transistor is provided to enable a reduction of a reverse short channel effect and a suppression of a threshold voltage. CONSTITUTION: The method comprises the steps of: depositing a gate oxide film(8) and a polysilicon(10) in that order on a substrate(2) and then forming a gate(10) of MOS transistor by polysilicon gate patterning; injecting the highest concentration of N2 ions into regions except the gate to reduce the reverse short channel effect and then injecting the lowest concentration of source/drain ions; and forming a insulating film spacer on side walls of the gate and then injecting the highest concentration of source/drain ions to form the lightly doped drain structure. Thereby, the manufacturing method of MOS transistor having lightly doped drain structure can be provided, so that the reverse short channel effect can be reduced, and the threshold voltage can be effectively suppressed.