发明名称 SILICON NITRIDE COMPOSITE SUBSTRATE
摘要 An Si3N4 ceramic composite substrate not cracking even if a mechanical or thermal shock is given to it and excellent in heat-radiation and heat-cycle-resistance characteristics. The Si3N4 substrate has a heat conductivity of more than 90 W/m. K, and a three-point flexural strength of more than 700 MPa. The relationship between the thickness tm of a metallic layer joined to a major surface of the Si3N4 substrate and the thickness tc of the Si3N4 substrate is given by 2 tm</=tc</=20 tm. When metallic layers are formed on both major surfaces of the Si3N4 substrate, the relationship between the total thickness ttm of the metallic layers and the thickness tc is given by ttm</=tc</=10ttm.
申请公布号 WO0024692(A1) 申请公布日期 2000.05.04
申请号 WO1999JP05910 申请日期 1999.10.25
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;ITOH, AI;MIYANAGA, MICHIMASA;YOSHIMURA, MASASHI 发明人 ITOH, AI;MIYANAGA, MICHIMASA;YOSHIMURA, MASASHI
分类号 H05K1/02;C04B35/584;C04B37/02;H01L21/48;H01L23/498;H01L23/538;H05K1/03;(IPC1-7):C04B37/02;H01L23/08;H01L23/15;H05K3/38 主分类号 H05K1/02
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