METHOD FOR MANUFACTURING A FIELD EMITTER OF FED

摘要

PURPOSE: A method for manufacturing triode field emitter is provided to reduce manufacturing cost, to improve resolution, to increase brightness and uniformity of electron emission by manufacturing diamond emitter of edge type and field emitter of triode structure. CONSTITUTION: A cathode electrode(220) is formed on the top of lower substrate(210). Cylindrical pattern is formed by making a non-isotropic etching after forming silicon nitrification film((230) on the top of cathode electrode(220). Diamond thin film(240) is made an isometric deposition in an equal thickness for all surface exposed. Cylindrical edge type diamond emitter is formed by removing diamond thin film(240) of the top of silicon nitrification film cylinder. Insulator is made an isometric deposition from the top of silicon nitrification film cylinder. Side part of edge type diamond emitter(250) and silicon nitrification film cylinder is exposed totally by etching insulator part around edge type diamond emitter(250). Gate electrode(270) is formed on the top of insulator(260). It is removed silicon nitrification film that gate electrode(270) and insulator(260) is deposited and is made a pattern using lift off method.