| 摘要 |
<p>The invention relates to an electronic power device integrated monolithically in a semiconductor substrate (1), including at least one power region, itself having at least one P/N junction provided therein which comprises a first semiconductor region (3) with a first type of conductivity extending into the substrate from the top surface of the device and being diffused into a second semiconductor region (2) with the opposite conductivity from the first, and including at least one edge protection structure of substantial thickness and limited planar size incorporating at least one trench (10) filled with dielectric material. The invention further relates to a method of manufacturing an electronic power device integrated monolithically in a semiconductor substrate (1), including at least one transistor having at least one P/N junction provided therein which comprises a first semiconductor region (3) with a first type of conductivity extending into the substrate from the top surface of the device and being diffused into a second semiconductor region (2) with the opposite conductivity from the first, and a silicon oxide trench (10), provided as an edge protection structure, which is formed by the following steps: forming a plurality of small trenches (8) in the substrate which have predetermined lengths and are bounded by a plurality of corresponding walls (9) of semiconductor material having predetermined widths; oxidising the semiconductor by means of a thermal process in order to oxidise the walls (9) and produce the oxide trench (10). <IMAGE> <IMAGE></p> |
