A technique for the desired crystalline phase formation for the manufacture of integrated circuits

摘要

A method of forming a crystalline phase material, the method including the steps of providing a crystalline material of a first crystalline phase, and subjecting the crystalline material to cyclical annealing between upper and lower elevated temperatures to transform first crystalline phase to a desired amount of the second crystalline phase. Ideally, the crystalline material is titanium silicide, the first crystalline phase is the C49 phase of titanium silicide, and the second crystalline phase is the C94 phase of titanium silicide.