| 摘要 |
PROBLEM TO BE SOLVED: To simplify a gate drive circuit for voltage-driven semiconductor device and reduce the power consumption thereof. SOLUTION: Input voltages VGS4 and VGS5 to final-stage switching elements FET4 and FET5, installed in the gate drive circuit for voltage-driven semiconductor devices, such as IGBT, are controlled so that the voltage level is increased when a current is passed through the IGBT and reduced when the current is maintained. Thus the power consumption of the gate drive circuit is reduced using simple constitution.
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