| 摘要 |
PROBLEM TO BE SOLVED: To realize a uniform film-formation based on a uniform distribution of film-forming gas concentration on a wafer which is a good film-forming atmosphere, by reducing the unevenness of the gas concentration distribution on the wafer caused by a disturbance of the film-forming atmosphere on the wafer that occurs at the introduction of a purge gas around the wafer. SOLUTION: In a process for manufacturing a semiconductor device, a film is formed on a wafer 9 by introducing a reactive gas 12, which is a film-forming gas, into a reaction chamber 10 while supplying a purge gas 11, which is a non-film-forming gas, around the wafer 9 to be treated. Here, other than the non-film-forming gas, at least one of the gases contained in the reactive gas 12 is contained as the purge gas 11 supplied around the wafer 9.
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