CHARGED PARTICLE IMPLANTATION FOR TRANSISTOR SYMMETRY
摘要
<p>A method for implanting charged particles in a substrate, such as in the manufacture of an integrated circuit semiconductor device, is given. The described method includes projecting a beam of charged particles (320) with a given divergence toward a substrate (330). A beam of charged particles (360) with greater divergence is formed by subjecting the beam (320) to an energy field (350). The substrate (330) is implanted using the increased divergence beam (360).</p>
