| 摘要 |
<p>A bidirectional field-effect transistor capable of controlling currents flowing in both directions by a single device and a matrix converter employing it. The bidirectional field-effect transistor comprises a semiconductor substrate (1), a gate region provided on the semiconductor substrate (1) and including a channel parallel with a major surface of the substrate (1) and a gate electrode (13a) for controlling the conductance of the channel, a first region provided on a first end side of the channel, and a second region provided on the second end side of the channel. A forward current flowing from the first electrode (11a) in the first region through the channel to the second electrode (12a) in the second region, and a reverse current flowing from the second electrode (12a) through the channel to the first electrode (11a) are controlled by a gate voltage applied to the gate electrode (13a).</p> |
