发明名称 |
Method for producing transistors |
摘要 |
The invention relates to a method for producing integrable semiconductor components, especially transistors or logic gates, using a p-doped semiconductor substrate. First of all, a mask is applied to the semiconductor substrate in order to define a window that is delimited by a peripheral edge. An n-doped trough is then produced in the semiconductor substrate by means of ion implantation using an energy that is sufficient for ensuring that a p-doped inner area remains on the surface of the semiconductor substrate. The edge area of the n-doped trough extends as far as the surface of the semiconductor substrate. The other n-doped and/or p-doped areas that make up the structure of the transistor or logic gate are then inserted into the p-doped inner area of the semiconductor substrate. The inventive method is advantageous in that it no longer comprises expensive epitaxy and insulation processes. In an n-doped semiconductor substrate, all of the implanted ions are replaced by the complementary species; i.e. n is exchanged for p and vice versa.
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申请公布号 |
US7271070(B1) |
申请公布日期 |
2007.09.18 |
申请号 |
US19990806224 |
申请日期 |
1999.08.13 |
申请人 |
GRUTZEDIEK HARTMUT;SCHEERER JOACHIM |
发明人 |
GRUTZEDIEK HARTMUT;SCHEERER JOACHIM |
分类号 |
H01L21/331;H01L21/337;H01L21/8222;H01L21/8226;H01L27/02;H01L27/082;H01L29/732;H01L29/808;H01L31/10 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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