发明名称 Communication semiconductor integrated circuit device and wireless communication system
摘要 The present invention provides a communication semiconductor integrated circuit device equipped with a high-frequency power amplifier circuit including a gain control amplifier and a bias circuit which supplies such a bias current as to linearly change the gain of the gain control amplifier, and a wireless communication system using the same. A bias current generating circuit which supplies a bias current to a linear amplifier that constitutes the communication high-frequency power amplifier circuit, comprises a plurality of variable current sources respectively different in current value and start level. These variable current sources are controlled according to an input control voltage and thereby combine their currents into a bias current. The combined bias current changes exponentially with respect to the input control voltage.
申请公布号 US7288986(B2) 申请公布日期 2007.10.30
申请号 US20040836197 申请日期 2004.05.03
申请人 发明人
分类号 H03G3/10;H03G3/20;H03G1/00;H03G3/30;H04B1/04 主分类号 H03G3/10
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