APPARATUS OF CU DECORATION FOR SILICON CRYSTAL DEFECT MEASUREMENT AND METHOD THEREOF

摘要

A copper decoration device for detecting defects of silicon wafer and a method thereof are provided to reduce the entire measuring time by performing a copper decoration and a copper ionization processes simultaneously. A copper decoration device is provided to measure wafer defects on which an oxide layer is formed. A copper ionization container(20) stores an electrolyte including a pair of ionization electrodes. A copper decoration container(30) stores the electrolyte supplied from the copper ionization container, and a pair of decoration electrodes is installed within the electrolyte. A first power voltage supply(50) supplies a voltage to the ionization electrode pair to generate copper ions. A second power voltage supply(60) supplies the voltage to the decoration electrodes pair to decorate the copper on a wafer surface installed at one side of the electrodes pair. A current measuring unit(70) measures and displays the current flowed through the ionization electrode pair. A connection pipe line(40) supplies the electrolyte from the copper ionization container to the copper decoration container.