| 摘要 |
A method for fabricating a semiconductor device is provided to reduce an area occupied by a capacitor in a peripheral region by forming the capacitor in a cell region and the peripheral region in the same shape. When a landing plug(203a) is formed on a cell region of a semiconductor substrate(200), a landing plug(203b) is simultaneously formed on a peripheral region of the substrate in the same shape as the landing plug formed in the cell region. When a storage node contact plug(205a) is formed on the cell region, a storage contact plug(205b) is simultaneously formed on the peripheral region in the same shape as the storage node plug formed on the cell region. When a capacitor(210a) is formed on the cell region, a capacitor(210b) is formed on the peripheral region in the same shape.
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