MEMORY CELL PROGRAMMED USING CURRENT FROM ACCESS DEVICE

摘要

A memory cell programmed using current from an access device is provided to obtain more reproducible and uniform pulses, by controlling the power transferred to a phase change element more accurately. According to a memory, a phase change element has a first side and a second side. A first line is coupled to the first side of the element. An access device is coupled to the second side of the element. A second line is coupled to the access device to control the access device. A circuit charges the first line with a first voltage and applies a voltage pulse to the second line, in order for the element to generate a current pulse through the access device in order to program the element with one of more than two states.