| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the sheet resistance of a silicidated source/drain diffused layer and its dispersion, and further reducing a junction leakage current at performing silicidation using a nickel film or a nickel alloy film, and a method for manufacturing the same. SOLUTION: The system includes a first step of forming a transistor 26 with a gate electrode 16 and a source/drain diffusion layer 24 on a semiconductor substrate 10, a second step of forming a metal film 28 composed of nickel or a nickel alloy at a substrate temperature of 220 to 300°C so as to cover the gate electrode and the source/drain diffusion layer on the semiconductor substrate, and a third step of forming a silicide film 34b composed of nickel silicide or nickel alloy silicide on the source/drain diffusion layer by allowing the metal film to react with an upper section of the source/drain diffusion layer. COPYRIGHT: (C)2009,JPO&INPIT
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