发明名称 PHOTORESIST REMOVING METHOD
摘要 PROBLEM TO BE SOLVED: To effectively peel resist made of phenol resin remaining sticking on a substrate top surface at a fast peeling speed without damaging the substrate itself. SOLUTION: High-density ozone water is applied over the top surface of the substrate where novolak-resin based photoresist remains and sticks and irradiated with ultraviolet light (for example, excimer laser light), which produces an OH radical from part of ozone of the high-density ozone water. Then the produced OH radical makes the photoresist polyphenolic and the remaining ozone of the high-density ozone water reacts on the photoresist having been made polyphenolic to fragmentate and peel the photoresist off the substrate surface. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008311257(A) 申请公布日期 2008.12.25
申请号 JP20070154758 申请日期 2007.06.12
申请人 UNIV OF TSUKUBA 发明人 ABE YUTAKA;FUJIMORI KEN;IKE MASATOSHI
分类号 H01L21/027;H01L21/304 主分类号 H01L21/027
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