| 摘要 |
PROBLEM TO BE SOLVED: To reduce or eliminate an STI level difference in an element separation process. SOLUTION: When forming isolation grooves 105 for separating a semiconductor element formed on a semiconductor device 101, after an insulating film 106 deposited on the separating grooves 105 is ground to be flush with stopper layers 102, the insulating film 106 is etched to be flush with the semiconductor device 101, to thereby form protruding stopper films 102, and then the protruding stopper films 102 are removed by CMP using a ceria system slurry. Accordingly, the CMP using the ceria system slurry can selectively polish the protruding portions, thereby selectively polishing only the stopper films 102, which makes the insulating film 106 and the semiconductor device 101 flush with each other to thereby reduce or eliminate the STI level difference. COPYRIGHT: (C)2009,JPO&INPIT
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