| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor etching method capable of easily etching a semiconductor layer that cannot be etched easily, such as a group III-V nitride semiconductor, by a relatively simple process. <P>SOLUTION: The etching method includes: a step of forming a solid layer, such as a metal fluoride layer 3, at least as one portion of an etching mask on the surface of substrates 1, 2; a step of performing chemical processing to the solid layer; and a step of etching the substrates with the solid layer as a mask. <P>COPYRIGHT: (C)2009,JPO&INPIT |
