| 发明名称 |
CMOS IMAGE SENSOR STRUCTURE |
| 摘要 |
A semiconductor device includes a substrate, a logic gate structure, a photosensitive gate structure, a hard mask layer, a first spacer, a first source, a first drain, a second spacer, a second source and a second drain. The logic gate structure and the photosensitive gate structure are disposed on a surface of the substrate. The hard mask layer covers the logic gate structure, the photosensitive gate structure and the surface of the substrate. The first spacer overlies the hard mask layer conformal to a sidewall of the logic gate structure. The first source and drain are respectively disposed in the substrate at two opposite sides of the logic gate structure. The second spacer overlies the hard mask layer conformal to a sidewall of the photosensitive gate structure. The second source and drain are respectively disposed in the substrate at two opposite sides of the photosensitive gate structure. |
| 申请公布号 |
US2016240578(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201615017571 |
申请日期 |
2016.02.05 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG Chiao-Chi;TSENG Chung-Chuan;CHU Li-Hsin;LIU Chia-Wei |
| 分类号 |
H01L27/146;H01L31/113 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a logic gate structure on a surface of the substrate; a photosensitive gate structure on the surface of the substrate; a hard mask layer covering the logic gate structure, the photosensitive gate structure and the surface of the substrate; a first spacer overlying the hard mask layer conformal to a sidewall of the logic gate structure; a first source and a first drain respectively disposed in the substrate at two opposite sides of the logic gate structure; a second spacer overlying the hard mask layer conformal to a sidewall of the photosensitive gate structure; and a second source and a second drain respectively disposed in the substrate at two opposite sides of the photosensitive gate structure. |
| 地址 |
Hsinchu TW |
