| 发明名称 |
CMOS NFET AND PFET COMPARABLE SPACER WIDTH |
| 摘要 |
Embodiments of the present disclosure provide a structure including: a p-type field effect transistor (pFET device) and an n-type field effect transistor (nFET device) each having sidewall spacers on opposite sidewalls of a gate and source drain region adjacent to the sidewall spacers, a distance between the pFET source drain region and the pFET gate is substantially equal to a distance between the nFET source drain region and the nFET gate. |
| 申请公布号 |
US2016240535(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201615079613 |
申请日期 |
2016.03.24 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;OK Injo;Seo Soon-Cheon |
| 分类号 |
H01L27/092;H01L29/06 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure comprising:
a p-type field effect transistor (pFET device) and an n-type field effect transistor (nFET device) each having sidewall spacers on opposite sidewalls of a gate and source drain region adjacent to the sidewall spacers, a distance between the pFET source drain region and the pFET gate is substantially equal to a distance between the nFET source drain region and the nFET gate. |
| 地址 |
Armonk NY US |
