IGBT WITH BUILT-IN DIODE AND MANUFACTURING METHOD THEREFOR

摘要

An insulated gate bipolar translator (IGBT) with a built-in diode and a manufacturing method thereof are provided. The IGBT comprises: a semiconductor substrate (1) of the first conduction type which has a first major surface (1S1) and a second major surface (1S2), wherein the semiconductor substrate (1) comprises an active region (100) and a terminal protection area (200) which is located at the outer side of the active region; an insulated gate transistor unit which is formed at the side of the first major surface (1S1) of the active region (100), wherein a channel of the first conduction type is formed thereon during the conduction thereof; and first semiconductor layers (10) of the first conduction type and second semiconductor layers (11) of the second conduction type of the active region, which are formed at the side of the second major surface (1S2) of the semiconductor substrate (1) alternately, wherein the IGBT only comprises the second semiconductor layers (11) in the terminal protection area (200) which is located at the side of the second major surface (1S2) of the semiconductor substrate (1).

主权项

1. An insulated-gate bipolar translator (IGBT) with a built-in diode, comprising:
a semiconductor substrate with a first conductivity type which having a first major surface and a second major surface, wherein the semiconductor substrate comprises an active region and a terminal protection area located outside the active region; an insulated gate type transistor unit formed on the active region along the first major surface, wherein a channel with the first conductivity type is formed by the insulated gate type transistor unit during a conduction thereof; and a first semiconductor layer with the first conductivity type and a second semiconductor layer with a second conductivity type, which are spaced apart from each other and formed on the active region along the second major surface of the semiconductor substrate; wherein the terminal protection area along the second major surface of the semiconductor substrate of the IGBT with the built-in diode comprises only the second semiconductor layer.