SEMICONDUCTOR DEVICES AND ARRANGEMENTS FOR ELECTROSTATIC DISCHARGE PROTECTION

摘要

A semiconductor device and device arrangement including a plurality of semiconductor regions of different conductivity types and a plurality of gates which form electrically conducting paths between the semiconductor regions. The semiconductor device and device arrangement may be configured to protect against electrostatic discharge.

主权项

1. A semiconductor device, comprising:
a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type disposed adjacent to the first semiconductor region; a third semiconductor region and a fourth semiconductor region of the second conductivity type disposed over or at least partially within the first semiconductor region, a fifth semiconductor region of the first conductivity type disposed between the third and fourth semiconductor regions, and a first gate disposed over the fifth semiconductor region; a sixth semiconductor region and a seventh semiconductor region of the first conductivity type disposed over or at least partially within the second semiconductor region, an eighth semiconductor region of the second conductivity type disposed between the sixth and seventh semiconductor regions, and a second gate disposed over the eighth semi conductor region; a plurality of dummy gates; a first electrically conductive path leading from the third semiconductor region via a dummy gate of the plurality of dummy gates to the seventh semiconductor region, and a second electrically conductive path leading from the sixth semiconductor region via another dummy gate of the plurality of dummy gates to the fourth semiconductor region.