发明名称 |
SEMICONDUCTOR MODULES AND METHODS OF FORMING THE SAME |
摘要 |
Electronic modules, and methods of forming and operating modules, are described. The modules include a capacitor, a first switching device, and a second switching device. The electronic modules further include a substrate such as a DBC substrate, which includes an insulating layer between a first metal layer and a second metal layer, and may include multiple layers of DBC substrates stacked over one another. The first metal layer includes a first portion and a second portion isolated from one another by a trench formed through the first metal layer between the two portions. The first and second switching devices are over the first metal layer, a first terminal of the capacitor is electrically connected to the first portion of the first metal layer, and a second terminal of the capacitor is electrically connected to the second portion of the first metal layer, with the capacitor extending over the trench. |
申请公布号 |
US2016240470(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615138681 |
申请日期 |
2016.04.26 |
申请人 |
Transphorm Inc. |
发明人 |
Wu Yifeng;Yea Sung Hae |
分类号 |
H01L23/498;H01L25/07;H01L25/00;H01L29/778;H01L27/088;H01L29/20;H01L23/00;H01L23/552;H01L25/065;H01L27/06 |
主分类号 |
H01L23/498 |
代理机构 |
|
代理人 |
|
主权项 |
1. An electronic module, comprising:
a capacitor; a first switching device comprising a first transistor, and a second switching device comprising a second transistor; and a substrate comprising an insulating layer between a first metal layer and a second metal layer, the first metal layer including a first portion and a second portion, the second portion being electrically isolated from the first portion by a trench formed through the first metal layer between the first portion and the second portion; wherein the first and second switching devices are over the first metal layer; and a first terminal of the capacitor is electrically connected to the first portion of the first metal layer, and a second terminal of the capacitor is electrically connected to the second portion of the first metal layer, with the capacitor extending over the trench. |
地址 |
Goleta CA US |