| 发明名称 |
RESISTIVE MEMORY DEVICE, RESISTIVE MEMORY SYSTEM, AND METHOD OF OPERATING THE RESISTIVE MEMORY SYSTEM |
| 摘要 |
A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state. |
| 申请公布号 |
US2016240250(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201615044301 |
申请日期 |
2016.02.16 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH EUN CHU;YOO YOUNG-GEON;KONG JUN JIN;SON HONG-RAK;SHIN HAN-SHIN |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of operating a resistive memory system comprising a resistive memory device including multi-level memory cells, the method comprising:
setting levels of reference voltages used to determine resistance states of the multi-level memory cells; and reading data of the multi-level memory cells based on the reference voltages; wherein a difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state. |
| 地址 |
Suwon-Si KR |
