发明名称 SEMICONDUCTOR DEVICE HAVING HIGH-VOLTAGE TRANSISTOR
摘要 A semiconductor device includes a semiconductor device, comprising a memory cell array including a plurality of memory cells connected to a first bit line and a second bit line, respectively, a page buffer group, and bit line selection circuits including a plurality of selection circuit blocks to connect the first bit lines or the second bit lines to the page buffer group, wherein each of the selection circuit blocks includes a first contact region and a second contact region to which the first and second bit lines coupled, and same bit lines of the first and second bit lines are coupled to contact regions adjacent to one another of the first and second contact regions included in bit line selection circuits adjacent to one another of the bit line selection circuits.
申请公布号 US2016240232(A1) 申请公布日期 2016.08.18
申请号 US201615138998 申请日期 2016.04.26
申请人 SK hynix Inc. 发明人 LEE Dong Hwan
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项 1. A semiconductor device, comprising: a memory cell array including a plurality of memory cells connected to a first bit line and a second bit line, respectively; a page buffer group; and bit line selection circuits including a plurality of selection circuit blocks to connect the first bit lines or the second bit lines to the page buffer group, wherein each of the selection circuit blocks includes a first contact region and a second contact region to which the first and second bit lines coupled, and same bit lines of the first and second bit lines are coupled to contact regions adjacent to one another of the first and second contact regions included in bit line selection circuits adjacent to one another of the bit line selection circuits.
地址 Gyeonggi-do KR