发明名称 Error-tolerant memories
摘要 Methods and apparatuses relating to error-tolerant memories are provided. In one example embodiment, output signals from at least three memory devices are supplied to an error correction device. The error correction device outputs a corrected data value in such a manner that, when the read data values match, this data value is output and, in at least one state in which the data values do not match, a previously output data value is retained.
申请公布号 US9424124(B2) 申请公布日期 2016.08.23
申请号 US201313914073 申请日期 2013.06.10
申请人 INFINEON TECHNOLOGIES AG 发明人 Georgakos Georg;Goessel Michael;Sogomonyan Egor
分类号 G11C29/00;G06F11/08;H03K19/003;H03K19/23;G06F11/10 主分类号 G11C29/00
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A memory element arrangement for storing a data value, comprising: N memory elements, wherein N is an integer, and wherein N≧3; a data input configured to supply the data value to each of the memory elements; and an error correction device having one output and at least three inputs, wherein an output of each of at least three of the N memory elements is coupled to a respective one of the inputs of the error correction device, and wherein the error correction device is configured, when all of the at least three memory elements output values identical to one another at their respective outputs, to provide a value identical to the values output by the memory elements at the output of the error correction device and, in at least one state which is independent of a value previously output at the output of the error correction device and in which all the memory elements do not output values identical to one another at their respective outputs, to retain the value previously output independently of the values output by the at least three memory elements.
地址 Neubiberg DE