Method of forming metal gate electrode

摘要

An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially filling the opening with a first metal material over the high-dielectric-constant material. The method further includes filling the opening with a capping layer over the first metal material. The method additionally includes partially removing the first metal material and the capping layer in the opening using a wet etching process in a solution including one or more of H2O2, NH4OH, HCl, H2SO4 or diluted HF. The method also includes fully removing the remaining capping layer in the opening using a wet etching process in a solution includes one or more of NH4OH or diluted HF. The method further includes depositing a second metal material in the opening over the remaining first metal material.

主权项

1. A method, comprising:
partially filling an opening in a dielectric material with a high-dielectric-constant material; partially filling the opening with a first metal material over the high-dielectric-constant material; filling a remaining portion of the opening with a capping layer over the first metal material; partially removing the first metal material and the capping layer in the opening using a first wet etching process; fully removing the remaining capping layer in the opening using a second wet etching process; and depositing a second metal material in the opening over the remaining first metal material.