Heat treatment apparatus for heating substrate by irradiation with flashes of light, and heat treatment method

摘要

A first flash heating is performed in which a lower flash lamp irradiates a back surface of a semiconductor wafer with flashes of light, so that heat conduction from the back surface to a surface of the semiconductor wafer raises the temperature of the surface from the room temperature to an intermediate temperature. Then, a second flash heating is performed in which an upper flash lamp irradiates the surface of the semiconductor wafer with flashes of light, to raise the temperature of the surface of the semiconductor wafer from the intermediate temperature to a target temperature. Since only the irradiation with flashes of light emitted from the lower flash lamp and the upper flash lamp is used to cause the semiconductor wafer having the room temperature to reach the target temperature, all heat treatments can be completed in an extremely short time of one second or less.

主权项

1. A heat treatment apparatus for heating a substrate having a pattern formed on a front surface thereof by irradiating said substrate with flashes of light, said heat treatment apparatus comprising:
a chamber configured to receive a substrate; a support member configured to support a substrate within said chamber; a first flash lamp configured to irradiate a back surface of a substrate supported on said support member with flashes of light, to thereby perform a supplementary heating on said substrate; a second flash lamp configured to irradiate a front surface of said substrate having subjected to the supplementary heating with flashes of light, to thereby heat said front surface to a predetermined target temperature; and a halogen lamp configured to, before said first flash lamp starts the supplementary heating, preheat said substrate by irradiating said back surface with light.