Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

摘要

Provided is a method of manufacturing a semiconductor device, which is capable of increasing the controllability of the concentration of carbon in a film by increasing the yield when a boron carbonitride film or a boron nitride film is formed. The method includes forming a film containing boron, carbon and nitrogen or a film containing boron and nitrogen on the substrate by performing, a predetermined number of times, a cycle including supplying a source gas consisting of boron and a halogen element to a substrate and supplying a reactive gas consisting of carbon, nitrogen and hydrogen to the substrate.

主权项

1. A method of manufacturing a semiconductor device, comprising forming a film containing boron, carbon and nitrogen or a film containing boron and nitrogen on a substrate by performing, a predetermined number of times, a cycle comprising: (a) supplying a source gas comprising a molecule containing boron and a halogen element to the substrate; (b) supplying a reactive gas consisting of carbon, nitrogen and hydrogen to the substrate; and (c) supplying a nitriding gas to the substrate, wherein a first layer containing boron and the halogen element is formed in the step (a), a second layer containing boron, carbon and nitrogen is formed by reacting the first layer with the reactive gas in the step (b), and a third layer containing boron, carbon and nitrogen or containing boron and nitrogen is formed by nitriding the second layer in the step (c).