发明名称 Techniques for probabilistic dynamic random access memory row repair
摘要 Examples are disclosed for probabilistic dynamic random access memory (DRAM) row repair. In some examples, using a row hammer limit for DRAM and a maximum activation rate for the DRAM a probabilistic row hammer detection value may be determined. The probabilistic row hammer detection value may then be used such that a probability is acceptably low that a given activation to an aggressor row of the DRAM causes the row hammer limit to be exceeded before a scheduled row refresh is performed on one or more victim rows associated with the aggressor row. Other examples are described and claimed.
申请公布号 US9449671(B2) 申请公布日期 2016.09.20
申请号 US201314132987 申请日期 2013.12.18
申请人 INTEL CORPORATION 发明人 Crawford John H.;Morris Brian S.;Mandava Sreenivas;Ramanujan Raj K.
分类号 G11C7/02;G11C11/406;G06F13/16 主分类号 G11C7/02
代理机构 代理人
主权项 1. An apparatus comprising: logic for a memory controller, at least a portion of the logic in hardware, the logic to: receive information to indicate a row hammer limit for dynamic random access memory (DRAM) having a given activate rate to rows for the DRAM;determine a row hammer detection value that selects an activation to an aggressor row of the DRAM rows that causes a pseudo targeted row refresh (pTRR) to one or more victim rows of the DRAM rows associated with the aggressor row based on a first probability that the activation causes the row hammer limit to be exceeded for the aggressor row before a scheduled row refresh is performed on the one or more victim rows;cause a random number to be generated following a first activation to a first aggressor row;decrement the random number for each subsequent activation to any aggressor rows until the random number is decremented to zero;select the first activation to the first aggressor row based on the first activation being the subsequent activation that caused the random number to be decremented to zero; andcause a first pTRR to be sent to one or more victim rows associated with the first aggressor row.
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