| 摘要 |
PURPOSE:To eliminate stepwise cut of a wire by forming a wire of the prescribed pattern by injecting an impurity with a heat resistant resin layer of the prescribed shape coated on a semiconductor substrate as a mask. CONSTITUTION:Polysilicon films 8, 9, 10 are respectively formed on a field oxidized film 5, a gate oxidized film 7 on an N type Si substrate 1 having a P- well 3. A polyimide isoindoloquinaldine (PIG) resin film 11 is selectively formed from the region of the well 3 to a polysilicon wire 9, boron ion beam 12 is implanted with the film 11 as a mask, thereby forming semiconductor regions 13, 14. In this manner, since an etchant for the PIG resin does not operate the SiO2 film, the stepwise difference between the wire 9 and the SiO2 film becomes smooth, thereby eliminating the stepwise cut of the wire. |
