| 摘要 |
<p>PURPOSE:To reduce wire breaking, peeling, etc., by providing a 1st protection layer which is formed on a scanning line across an insulating film and a 3rd protection layer which is formed in the area of a 2nd protection layer, formed on the 1st protection layer, that the scanning line does not cross. CONSTITUTION:The 1st protection layer 33a and 2nd protection layer 33b are formed on the scanning line 23 for supplying a scanning line across at least one layer of the insulating film 5. Then the signal line 11 crosses the 2nd protection layer 33b thereupon and the 3rd protection layer 33c is formed in the area of the 2nd protection layer 33b that the signal line 11 does not cross. Consequently, an etchant is prevented from coming into contact with metal constituting the scanning line 23 through pinholes in an etching process because of the presence of the 1st protection layer 33a, 2nd protection layer 33b, and 3rd protection layer 33c to etch the metal. Consequently, the scanning line which is small in wire breaking, peeling, etc., in the etching process is obtained.</p> |
