发明名称 |
Plasma enhanced CVD process for fluorinated silicon nitride films |
摘要 |
A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride layer on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH4 and the preferred perfluorosilane is SiF4.
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申请公布号 |
US5204138(A) |
申请公布日期 |
1993.04.20 |
申请号 |
US19910814973 |
申请日期 |
1991.12.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NGUYEN, SON V.;DOBUZINSKY, DAVID M.;DOPP, DOUGLAS J.;HARMON, DAVID L. |
分类号 |
C23C14/06;C23C16/34;C23C16/505;C30B25/02;H01L21/318 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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