发明名称 |
Single pass compensation for electron beam proximity effect |
摘要 |
A method for compensation for the proximity effect in electron beam lithography on an e-beam resist material. The exposed surface of the resist material is subdivided into non-overlapping pixels of approximately equal area, with a first set of pixels representing a selected pattern for e-beam lithography and a second set of pixels including all other pixels. The cumulative exposure for each pixel in the first set is computed by adding to the direct beam exposure of that pixel the contributions of spillover (backscattering) exposure arising from exposure of nearby pixels in the second set. The cumulative exposure for each pixel in the second set is computed by adding to the reduced beam exposure of that pixel the contributions of spillover exposure arising from exposure of nearby pixels in the second set. The resist material is then irradiated, pixel-by-pixel with a fixed electron beam radius, with the exposure at each pixel being equal to the cumulative exposure computed for that pixel.
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申请公布号 |
US5254438(A) |
申请公布日期 |
1993.10.19 |
申请号 |
US19920863917 |
申请日期 |
1992.04.06 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
OWEN, GERAINT;LIU, HUA-YU |
分类号 |
H01J37/302;(IPC1-7):G03C5/00 |
主分类号 |
H01J37/302 |
代理机构 |
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