| 摘要 |
<p>A high frequency oscillator with operating frequencies of 30 MHz or greater having an etched quartz thickness shear resonator (1) with resonating means. The resonator has a support structure (3) and a much thinner resonating membrane cantilevered from the support structure. In a preferred embodiment, the design of the support structure is such that a sloped edge (6,6') is provided between the support structure and the membrane, thus facilitating the application of electrode resonating means extending from the support structure to the membrane. In another preferred embodiment, a plurality of resonators having a support structure and cantilevered membrane with at least one sloped edge are formed on a quartz wafer in a manner similar to semiconductor chip fabrication. <IMAGE></p> |
