| 摘要 |
<p>PURPOSE: To provide a method of manufacturing a highly integrated semiconductor memory device which includes a capacitor that increases a cell capacitor in effective area, independent of the specific conditions. CONSTITUTION: A conductive structure is formed on a semiconductor substrate, an etching mask is formed on the conductive structure, then the conductive structure is etched for the formation of a first electrode, and a dielectric film and a second electrode are formed on the first electrode. An insulating film 22, such as a silicon nitride film with pinholes 9, is formed on a conductive layer 40 or the conductive structure and exposed to an oxidizing atmosphere to oxidize the surface of the conductive layer 40 or the conductive structure, whereby silicon oxide islands 44 are formed which serves as an etching mask. Therefore, since limited and specific conditions are not required, a manufacturing process becomes simple, a cell capacitor can be enhanced in effective area without limits, and this process can be applied to the formation of various capacitors.</p> |
