| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photoresist material excellent in the stability of sensitivity to long-term preservation and a variation of ambient temperature by incorporating an α,β-unsaturated ketone compound. SOLUTION: The photoresist material contains at least an α,β-unsaturated ketone compound. This ketone compound may be represented by the formula, wherein R1 and R2 are each 1-10C linear alkyl, 3-10C branched or cyclic alkyl or 6-14C aryl. The photoresist material is particularly profitable when used as a chemical amplification type one exposed with high energy lines, X-rays or electron beams having such a short wavelength as <=500 nm. The photoresist material is applied on a substrate, heat-treated, exposed with high energy lines, X-rays or electron beams having <=500 nm wavelength through a photomask and developed with a developer to form the objective pattern. |
