| 摘要 |
PROBLEM TO BE SOLVED: To enable simply reducing irregularity of a threshold voltage of an MOS type transistor. SOLUTION: In this manufacturing method, after an MOS type transistor TR is formed on the surface of a semiconductor substrate 10, an interlayer insulating film 24 is formed covering the transistor TR. The insulating film 24 contains a silicon oxide film 20 in which hydrogen silsesquioxane resin film is turned into ceramic. After a wiring layer 30A is formed on the insulating film 24, a silicon nitride film 32 is formed as a surface protecting film on the insulating film 24, covering the wiring layer 30A. In order to reduce process damage, thermal treatment is performed in a nitrogen gas atmosphere at 400 deg.C for 30 minutes. At this time, hydrogen in the silicon oxide film 20 is released and dispersed in a channel part of the transistor TR, and the interface state is reduced. Since hydrogen does not penetrate the silicon nitride film 32, hydrogen may not be contained in a thermal treating atmosphere. |
