发明名称 |
Trench isolation structures for a semiconductor device |
摘要 |
A semiconductor device includes a body of semiconductor material having first trenches and second trenches. Each of the first trenches has vertical sidewalls and each of the second trenches has tapered sidewalls. First transistors are arranged in said semiconductor body and are isolated from each other by the first trenches. Second trenches are arranged in the semiconductor body and are isolated from each other by the second trenches./!
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申请公布号 |
US5753961(A) |
申请公布日期 |
1998.05.19 |
申请号 |
US19950467541 |
申请日期 |
1995.06.07 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TSUCHIAKI, MASAKATSU |
分类号 |
H01L21/302;H01L21/265;H01L21/3065;H01L21/308;H01L21/76;H01L21/762;H01L21/8242;H01L21/8244;H01L27/108;H01L27/11;H01L27/118;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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