发明名称 |
Reduction of reflection by amorphous carbon |
摘要 |
A pattern forming method having a step of forming an amorphous carbon film on a patterning layer formed on a substrate, a step of forming a photoresist film on the amorphous carbon film, a step of selectively exposing and developing the photoresist film to form a photoresist pattern, and a step of successively dry-etching the amorphous carbon film and the patterning layer by using the photoresist film as an etching mask. Desired optical constants of an amorphous carbon film formed by sputtering can be obtained by controlling a substrate temperature and other parameters.
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申请公布号 |
US6007732(A) |
申请公布日期 |
1999.12.28 |
申请号 |
US19970841787 |
申请日期 |
1997.05.05 |
申请人 |
FUJITSU LIMITED |
发明人 |
HASHIMOTO, KOICHI;OHTSUKA, TOSHIYUKI;SHINPUKU, FUMIHIKO;MATSUNAGA, DAISUKE;ENDA, TAKAYUKI |
分类号 |
H01L21/027;H01L21/311;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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