| 摘要 |
PURPOSE: A laser diode is provided to prevent a carrier leakage and effectively reduce an inner quantum loss and a threshold current, by forming a carrier barrier layer for controlling a carrier leaked between a clad layer and an active layer. CONSTITUTION: The first clad layer(21), an active layer(28) and the second clad layer(27) are stacked on a chemical compound semiconductor substrate(20). The first clad layer(21) is made of n-type InP, and the second clad layer(27) is made of p-type InP. An impurity concentration of each of the first and second clads(21,27) is about 1 by 10¬18/cm¬3. The active layer(28) consists of the first limitation layer(22), a carrier barrier layer(23), the second limitation layer(24), a well layer(25) and the third limitation layer(26). The first limitation layer(22) is made of n-type InGaAsP with a bandgap of 1.1 micrometer. The carrier barrier layer(23) is made of highly-doped InP with a bandgap of 0.98 micrometer. The second limitation layer(24) is made of InGaAsP with a bandgap of 1.1 micrometer. The third limitation layer(26) is made of InGaAsP with a bandgap of 1.1 micrometer.
|
