| 摘要 |
PURPOSE: A method for forming a self-aligned mask is provided to reduce the manufacturing steps of the photo-mask process by forming the mask using a self-align manner. CONSTITUTION: An oxide layer and the first nitride layer are sequentially formed on a semiconductor substrate(1) formed with an active area and a field area. The first nitride layer pattern is formed by etching the first nitride layer using a photolithography process. After patterning the oxide layer by using the first nitride layer pattern as a mask, the first nitride layer is removed. Then, the second nitride layer(4) is deposited on the semiconductor substrate(1). After polishing the second nitride layer(4) by performing a chemical mechanical process, the second nitride layer pattern is formed by removing the patterned oxide layer.
|
