| 摘要 |
PURPOSE: A method for forming contact holes of a semiconductor device is provided to reduce the contact resistance of an upper conductive layer and a lower conductive layer by adding inert gas and O2 to main etching gas. CONSTITUTION: The first insulating layer(22) is formed on the first conductive layer. The second conductive layer and an anti-reflective layer are formed on the first insulating layer(22) and are patterned. Then, the second insulating layer(25) is formed on an entire surface of the resulted structure. In order to form the first contact hole for exposing a part of the patterned second conductive layer and the second contact hole for exposing a part of the first conductive layer, the second and the first insulating layers(25,22) are selectively etched, so that a part of the anti-reflective layer and a part of the first conductive layer are exposed. Then, the anti-reflective is etched together with the surface of the first conductive layer.
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