METHOD OF FORMING CONTACT PAD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact pad of a semiconductor device is provided to improve an overlap margin of the contact pad with respect to a following self-aligned contact by further obtaining the overlap margin by a width of a conductive layer spacer. CONSTITUTION: A gate electrode(12), a sidewall and an upper portion of which are insulated, is formed on a semiconductor substrate(10). A gap formed between gate electrodes(12) is buried by patterning a conductive layer formed on an upper portion of the structure, thereby forming a contact pad(15) including a sidewall having a predetermined thickness. A conductive layer spacer(13) is formed at the sidewall of the contact pad(15). The conductive layer spacer(13) is one selected from the group consisting of a polysilicon layer, a tungsten layer, and a tungsten silicide layer.