| 摘要 |
PROBLEM TO BE SOLVED: To protect a low dielectric constant insulating film against deterioration caused by irradiation with ultraviolet rays or impact of charged particles, by a method wherein resist is ashed by only oxygen radicals generated by thermal decomposition of ozone without using plasma. SOLUTION: A low-permittivity insulating film and a resist film are formed on a substrate, and the low-dielectric constant insulating film is processed using the resist film as a mask. That is, removal of a resist film is carried out by an ozone ashing device through a manner where ozone 12 generated by an ozonizer 11 is introduced into a processing chamber and spouted out against a substrate 14. The substrate 14 is heated by the heating mechanism of a stage. Ozone 12 is thermally decomposed into oxygen radicals on the heated substrate 14. The resist film is decomposed into carbon dioxide reacting on oxygen radicals and discharged out together with unused ozone through an exhaust vent 16. A resist film is ashed by only oxygen radicals generated by thermal decomposition of ozone, so that a base low-dielectric constant film is restrained from deteriorating. |
