Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride

摘要

Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride, and first and second main surfaces (3, 4). A part of the radiation produced (5) is decoupled through the first main surface and the second main surface has a reflector (6). The stack of different semiconductor layers is produced by applying an intermediate layer (9) on a substrate (8), applying a number of different gallium nitride layers on the intermediate layer, removing the substrate including the intermediate layer, and applying the reflector to the second main surface of the semiconductor body. Preferred Features: The substrate is made of silicon and the intermediate layer is made of silicon carbide. The intermediate layer is connected to the substrate by wafer bonding.