发明名称 PLASMA APPARATUS AND CATHODE ELECTRODE
摘要 PROBLEM TO BE SOLVED: To prevent re-attachment of a cathode material in consideration of etching process, in which the cathode for mounting an etching object is also etched and the cathode material is re-deposited on the etching object, when the etching object is etched by a plasma apparatus. SOLUTION: In a vacuum chamber 15, included in the plasma etching apparatus, each projected stripe with a right-angle triangular cross section and each grove 57 are alternately formed on the surface of the cathode electrode 20 provided facing opposite to an anode electrode 37.
申请公布号 JP2002016043(A) 申请公布日期 2002.01.18
申请号 JP20000193124 申请日期 2000.06.27
申请人 SONY CORP 发明人 ICHIKAWA IWAO;YAMAUCHI MANABU
分类号 H05H1/46;C23F4/00;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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