| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device where various kinds of processing conditions such as a polishing time in a CMP step can be always set for wafers of a product lot suitably even if an error occurs in a film thickness or the like in the preceding CVD step or the like. SOLUTION: By setting the processing conditions in the CMP step on the basis of the film thickness in the preceding CVD step of forming a film, even if the error occurs in the film thickness in the CVD step of forming the film, the setting of the processing conditions in the CMP step is optimized with the included error. More particularly, on the basis of the value of the CVD film thickness and the target value, an arithmetic part for processing conditions calculates the real polishing quantity of a current lot, arithmetic is performed on the basis of its data and the data of a polishing rate searched by 'a search of an updating target value' or an updating target value searched in S6 and then the polishing time is calculated (S9).
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