| 摘要 |
PROBLEM TO BE SOLVED: To enable the high-speed operation of a photodiode, and suppress the penetration of photo carriers generated in the photodiode into a MOS device, and prevent latch up phenomena. SOLUTION: A photodiode small in junction capacity is made of an N-type epitaxial layer 6 and a P-type epitaxial layer 3, and the photodiode is surrounded by a P+-type buried isolated diffused layer 4 and a P-type isolated diffused layer 7 and electrically isolated from a signal processing circuit including a MOS structure of transistor.
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